Analysis of the far-ultraviolet silicon lines in G dwarf stars
Rego, M.; Fernandez-Figueroa, M. J.; Cornide, M.
Spain
Abstract
The structure of the outer stellar regions is investigated for four G type dwarfs observed with the IUE satellite. Line fluxes of the Si II lines at 1817 A, 1808 A, and 1309 A and Si III at 1206 A are used to obtain temperatures and electronic densities. A temperature of 16,000 K is found from the lines at 1817 A and 1808 A, 26,000 K from the 1309 A line and 50,000 K from that at 1206 A. Predicted fluxes are compared with the observed ones. The significance of the results is discussed in terms of line formation regions.